irlms2002tr.pdf datasheet:

IRLMS2002TRwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/DC Converters, High Speed SwitchingD 1 6 D5D 2 DG 3 4 STop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Limit UnitDrain-Source Voltage VDS30VGate-Source Voltage VGS 20TC = 25 C6eTC = 70 C6eContinuous Drain Current (TJ = 150 C) IDTA = 25 C5.5b, cTA = 70 C A4.4b, cPulsed Drain Current (t = 300 s) IDM25TC = 25 C2.1Continuous Source-Drain Diode Current ISTA = 25 C1.1b, cTC = 25 C2.5