irlms4502.pdf datasheet:

PD- 93759BIRLMS4502HEXFET Power MOSFETl Ultra Low On-ResistanceA1 6l P-Channel MOSFET D DVDSS = -12Vl Surface Mount25DDl Available in Tape & Reel34G SRDS(on) = 0.042Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. This benefitprovides the designer with an extremely efficient device foruse in battery and load management applications..The Micro6 package with its customized leadframeproduces a HEXFET power MOSFET with Rds(on) 60%less than a similar size SOT-23. This package is ideal forapplications where printed circuit board space is at apremium. It's unique thermal design and RDS(on) reductionMicro6enables a current-handling increase of nearly 300%compared to the SOT-23.Absolute Maximum Ratings