irlr230a.pdf datasheet:

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 7.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.335 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V200Continuous Drain Current (TC=25oC) 7.5IDAContinuous Drain Current (TC=100oC)4.7IDM Drain Current-Pulsed 26 A1OVGS Gate-to-Source Voltage V_ 20EAS Single Pulsed Avalanche Energy 237 mJOIAR Avalanche Current 7.5 A1OEAR Repetitive Avalanche Energy 1 4.8 mJO3dv/dt Peak Diode Recovery dv/dt 5.0 V/ns O*Total Power Dissipation (TA=25oC)2.5 WPD Total Power Dissipation (TC=25oC)48 WLinear De