irlr2703.pdf datasheet:

PD- 9.1335BIRLR/U2703PRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Ultra Low On-Resistance VDSS = 30V Surface Mount (IRLR2703) Straight Lead (IRLU2703)RDS(on) = 0.045G Advanced Process Technology Fast SwitchingID = 23A S Fully Avalanche RatedDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possible on-resistance persilicon area. This benefit, combined with the fast switching speed andruggedized device design that HEXFET Power MOSFETs are well known for,provides the designer with an extremely efficient device for use in a widevariety of applications. D -P ak I-P akThe D-PAK is designed for surface mounting using vapor phase, infrared, orTO-252AA TO-251AAwave soldering techniques. The straight lead version (IRFU series) is forthrough-hole mounti