irlr2905z.pdf datasheet:

isc N-Channel MOSFET Transistor IRLR2905Z, IIRLR2905ZFEATURESStatic drain-source on-resistance:RDS(on)13.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-Source Voltage 16 VGSI Drain Current-Continuous 60 ADI Drain Current-Single Pulsed 240 ADMP Total Dissipation @T =25 110 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 1.38Channel-to-ambient thermal resistance/WRth(j-a) 1101isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N-Channel MO