irlr2905ztr.pdf datasheet:

IRLR2905ZTRwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source Voltage 20 VTC = 25 C50IDContinuous Drain Current (TJ = 175 C)bTC = 100 C45aIDMPulsed Drain Current 100 AISContinuous Source Current (Diode Conduction)50aIASAvalanche Current 50Single Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH EAS125 mJTC = 25 C136PDMaximum Power Dissipation WTA = 25 C3b, 8.3b, c TJ, TstgOperating Junction and Storage Temperature Range - 55 to 175 CTHERMAL RESISTANCE RATINGS Parameter