irlr2908.pdf datasheet:

isc N-Channel MOSFET Transistor IRLR2908, IIRLR2908FEATURESStatic drain-source on-resistance:RDS(on)28mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 80 VDSSV Gate-Source Voltage 16 VGSI Drain Current-Continuous 39 ADI Drain Current-Single Pulsed 150 ADMP Total Dissipation @T =25 120 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 1.3Channel-to-ambient thermal resistance/WRth(j-a) 1101isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N-Channel MOSFET