irlr2908pbf irlu2908pbf.pdf datasheet:

PD - 95552BIRLR2908PbFIRLU2908PbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 80V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 28m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 30ASDescriptionThis HEXFET Power MOSFET utilizes the latest processing techniquesto achieve extremely low on-resistance per silicon area. Additional featuresof this HEXFET power MOSFET are a 175C junction operating temperature,low RJC, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient andreliable device for use in a wide variety of applications.The D-Pak is designed for surface mounting using vapor phase, infrared,or wave soldering techniques. The straight lead version (IRFU series) isI-Pak