irls610a.pdf datasheet:

isc N-Channel MOSFET Transistor IRLS610AFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 VDSSV Gate-Source Voltage 20 VGSSDrain Current-Continuous@Tc=252.5I AD1.6Tc=100I Drain Current-Single Pulsed 12 ADMP Total Dissipation 19 WDT Operating Junction Temperature 150 jStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 6.6/WRth(ch-a) Channel-to-ambient thermal resistance 62.51isc websiteww

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