irls610a.pdf datasheet:

Advanced Power MOSFETFEATURESBVDSS = 200 V Logic Level Gate DriveRDS(on) = 1.5 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 2.5 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 1.185 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V200oContinuous Drain Current (TC=25 C)2.5IDAoCContinuous Drain Current (TC=100 )1.6IDM Drain Current-Pulsed 1 12 AOVGS Gate-to-Source Voltage _ 20 VEAS Single Pulsed Avalanche Energy 2 mJ20OIAR Avalanche Current 1 2.5 AOEAR Repetitive Avalanche Energy 1 mJ1.9O3dv/dt Peak Diode Recovery dv/dt V/ns5.0 OTotal Power Dissipation (TC=25 oC )19 WPDLinear Derating Factor W/ o