irls620a.pdf datasheet:

Advanced Power MOSFETFEATURESBVDSS = 200 V Logic Level Gate DriveRDS(on) = 0.8 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 4.1 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.609 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V200Continuous Drain Current (TC=25 o )C 4.1IDAContinuous Drain Current (TC=100 oC)2.5IDM Drain Current-Pulsed A1 18OVGS Gate-to-Source Voltage _ 20 VEAS Single Pulsed Avalanche Energy 2 mJ33OIAR Avalanche Current 4.1 A1OEAR Repetitive Avalanche Energy 12.6 mJOdv/dt Peak Diode Recovery dv/dt 35.0 V/nsOTotal Power Dissipation (TC=25 o )C 26 WPDLinear Derating Factor W/ o 0.21