irls630a.pdf datasheet:

Advanced Power MOSFETFEATURESBVDSS = 200 V Logic Level Gate DriveRDS(on) = 0.4 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 6.5 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.335 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V200oCContinuous Drain Current (TC=25 )6.5IDAContinuous Drain Current (TC=100 oC 4.1 )IDM Drain Current-Pulsed 132 AO_VGS Gate-to-Source Voltage VEAS Single Pulsed Avalanche Energy 256 mJOIAR Avalanche Current 1 6.5 AOEAR Repetitive Avalanche Energy 1 mJ3.6O3dv/dt Peak Diode Recovery dv/dt 5.0 V/ns OTotal Power Dissipation (TC=25 o )C 36 WPDoLinear Derating Fact