irls640a.pdf datasheet:

IRLS640AAdvanced Power MOSFETFEATURESBVDSS = 200 V Logic-Level Gate DriveRDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9.8 A Lower Input Capacitance Improved Gate ChargeTO-220F Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.145 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V200Continuous Drain Current (TC=25)9.8IDAContinuous Drain Current (TC=100)6.2IDM Drain Current-Pulsed 63 AVGS Gate-to-Source Voltage20 VEAS Single Pulsed Avalanche Energy 64 mJIAR Avalanche Current 18 AEAR Repetitive Avalanche Energy 4.0 mJdv/dt Peak Diode Recovery dv/dt 5 V/nsTotal Power Dissipation (TC=25)40 WPDLinear Derating Factor0.32 W/