irls640a.pdf datasheet:

Advanced Power MOSFETFEATURESBVDSS = 200 V Logic Level Gate DriveRDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9.8 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.145 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V200oCContinuous Drain Current (TC=25 )9.8IDAoCContinuous Drain Current (TC=100 )6.2IDM Drain Current-Pulsed 163 AOVGS Gate-to-Source Voltage _ VEAS Single Pulsed Avalanche Energy 264 mJOIAR Avalanche Current 1 18 AOEAR Repetitive Avalanche Energy 1 mJ4.0O3dv/dt Peak Diode Recovery dv/dt 5.0 V/ns OTotal Power Dissipation (TC=25 o )C 40 WPDoLinear Derating Facto