irlsz34a.pdf datasheet:

IRLSZ34AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic Level Gate DriveRDS(on) = 0.046 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 20 A Lower Input Capacitance Improved Gate ChargeTO-220F Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.033 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V60Continuous Drain Current (TC=25 oC )20IDAoContinuous Drain Current (TC=100 C)14IDM Drain Current-Pulsed1 80 AO +VGS Gate-to-Source Voltage _ 20 VEAS Single Pulsed Avalanche Energy 2343 mJ OIAR Avalanche Current1 20 AOEAR Repetitive Avalanche Energy mJ1 3.7 Odv/dt Peak Diode Recovery dv/dt 35.5 V/ns OTotal Power Dissipation (TC=25oC ) W37PDLinear Derating F