ixyy8n90c3.pdf datasheet:

Advance Technical Information900V XPTTM IGBTs VCES = 900VIXYY8N90C3GenX3TM IC110 = 8AIXYP8N90C3 VCE(sat) 2.5V tfi(typ) = 130nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-252 (IXYY)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 900 VC (Tab)VCGR TJ = 25C to 175C, RGE = 1M 900 VVGES Continuous 20 VTO-220 (IXYP)VGEM Transient 30 VIC25 TC = 25C 20 AIC110 TC = 110C 8 AICM TC = 25C, 1ms 48 AGC C (Tab)IA TC = 25C 4 A EEAS TC = 25C 15 mJG = Gate C = CollectorSSOA VGE = 15V, TVJ = 150C, RG = 30 ICM = 16 AE = Emitter Tab = Collector(RBSOA) Clamped Inductive Load @VCE VCESPC TC = 25C 120 WTJ -55 ... +175 CFeaturesTJM 175 C Tstg -55 ... +175 COptimized for Low Switching Losses Square RBSOATL Maximum Lead Temperature for Soldering 300 C