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jjt40n65ue.pdf datasheet:

jjt40n65uejjt40n65ue

650V 40A Trench and Field Stop IGBTJJT40N65UEKey performance: V =650VCETO-247 I =40A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machinesPackage parametersType Marking Package Packaging MethodJJT40N65UE T4065UE TO-247 TubeAll product information is copyrighted and subject to legal disclaimers. REV A.1.2 | MAY 20241JJT40N65UEMaximum ratingsSymbol Parameter Values UnitV Collector-emitter voltage 650 VCESV Gate-emitter voltage 20 VGESContinuous collector current (T =25) 80 ACICContinuous collector current (T =100) 40 ACI Pulsed collector current, t limited by T 160 ACM p vjmaxI D

 

Keywords - ALL TRANSISTORS DATASHEET

 jjt40n65ue.pdf Design, MOSFET, Power

 jjt40n65ue.pdf RoHS Compliant, Service, Triacs, Semiconductor

 jjt40n65ue.pdf Database, Innovation, IC, Electricity

 

 
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