Todos los transistores

 

jng50n120qs1.pdf datasheet:

jng50n120qs1jng50n120qs1

JNG50N120QS1 IGBT Features 1200V,50A V =2.1V@V =15V,I =50A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description TO-247-3L Plus JIAEN NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching applications. Absolute Maximum Ratings Symbol Parameter Value Units V Collector-Emitter Voltage 1200 V CESV Gate-Emitter Voltage + 30 V GES Continuous Collector Current ( T =25 ) 80 A CI C Continuous Collector Current ( T =100) 50 A CI Pulsed Collector Current (Note 1) 150 A CM I Diode Continuous Forward Current ( T =100 ) 50 A F CI Diode Maximum Forward Current (Note 1) 150 A FM Short Circuit Withstand Time t

 

Keywords - ALL TRANSISTORS DATASHEET

 jng50n120qs1.pdf Design, MOSFET, Power

 jng50n120qs1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 jng50n120qs1.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.