l2sc3356wt1g l2sc3356wt3g.pdf datasheet:

DATA SHEETLESHAN RADIO COMPANY, LTD.DESCRIPTION L2SC3356WT1GThe L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic. 3S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.1ORDERING INFORMATION2ShippingDevice MarkingSC-70L2SC3356WT1G24 3000/Tape & ReelS-L2SC3356WT1GL2SC3356WT3G10000/Tape & Reel24S-L2SC3356WT3GFEATURES We declare that the material of product compliance with RoHS requirements. Low Noise and High GainNF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High Power GainMAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHzABSOLUTE MAXIMUM RATINGS (TA = 25 C)Collector to Base Voltage VCBO