mje344g.pdf datasheet:

MJE344GPlastic NPN SiliconMedium-Power TransistorThis device is useful for medium voltage applications requiring highfT such as converters and extended range amplifiers.Featureshttp://onsemi.com These Devices are Pb-Free and are RoHS Compliant*0.5 AMPEREPOWER TRANSISTORSMAXIMUM RATINGSNPN SILICONRating Symbol Value Unit150-200 VOLTS, 20 WATTSCollector-Emitter Voltage VCEO 200 VdcCollector-Base Voltage VCB 200 VdcCOLLECTOREmitter Base Voltage VEB 5.0 Vdc2, 4Collector Current - Continuous IC 500 mAdcBase Current IB 250 mAdc3Total Power Dissipation PDBASE@ TC = 25_C 20 WDerate above 25_C 0.16 mW/_C1Operating and Storage Junction TJ, Tstg 65 to +150 _CEMITTERTemperature RangeStresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should n