mmbta56.pdf datasheet:

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR (PNP) SOT23 FEATURES General Purpose Amplifier Applications MARKING: 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBOV Collector-Emitter Voltage -80 V CEOVEBO Emitter-Base Voltage -4 V I Collector Current -500 mA CP Collector Power Dissipation 225 mW CR Thermal Resistance From Junction To Ambient 555 /W JAT Junction Temperature 150 jT Storage Temperature -55+150 stgELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =-100A, I =0 -80 V (BR)CBO C ECollector-emitter breakdown voltage V(BR)CEO IC=