sch1333.pdf datasheet:

SCH1333Ordering number : ENA1531SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1333ApplicationsFeatures 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID --2 ADrain Current (Pulse) IDP PW10s, duty cycle1% --8 AAllowable Power Dissipation PD When mounted on ceramic substrate (900mm20.8mm) 0.8 WChannel Temperature Tch 150 CStorage Temperature Tstg --55 to +150 CElectrical Characteristics at Ta=25CRatingsParameter Symbol Conditions Unitmin typ maxDrain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --20 VZero-Gate Voltage Drain Current IDSS VDS=--20V, VGS=0V --1 AGate-to-Source Leakage Current IGS

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