sft1423.pdf datasheet:

SFT1423Ordering number : ENA1509SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1423ApplicationsFeatures Low ON-resistance. 4V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 2 ADrain Current (PW10s) IDP PW10s, duty cycle1% 10 A1.0 WAllowable Power Dissipation PDTc=25C20 WChannel Temperature Tch 150 CStorage Temperature Tstg --55 to +150 CElectrical Characteristics at Ta=25CRatingsParameter Symbol Conditions Unitmin typ maxDrain-to-Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 500 VZero-Gate Voltage Drain Current IDSS VDS=400V, VGS=0V 100 AGate-to-Source Leakage Current IGSS VGS=16V, VDS=0V 10 ACutoff Voltage

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