tig058e8.pdf datasheet:

Ordering number : ENA1381ATIG058E8N-Channel IGBThttp://onsemi.com( );400V, 150A, VCE sat 4V, Single ECH8Features Low-saturation voltage Low voltage drive (4V) Enhansment type Built-in Gate-to-Emitter protection diode Mounting Height 0.9mm, Mounting Area 8.12mm2 dv / dt guarantee* Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Emitter Voltage VCES 400 VGate-to-Emitter Voltage (DC) VGES 6 VGate-to-Emitter Voltage (Pulse) VGES PW1ms 8 VCollector Current (Pulse) ICP CM=150F, VGE=4V 150 AMaximum Collector-to-Emitter dv / dt dVCE / dt VCE320V, starting Tch=25C 400 V / sChannel Temperature Tch 150 CStorage Temperature Tstg -40 to +150 C* : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 40