tig065e8.pdf datasheet:

TIG065E8 Ordering number : ENA1862SANYO SemiconductorsDATA SHEETN-Channel IGBTTIG065E8Light-Controlling Flash ApplicationsFeatures Low-saturation voltage Low voltage drive (2.5V) Enhansment type Built-in Gate-to-Emitter protection diode Mounting Height 0.9mm, Mounting Area 8.12mm2 dv / dt guarantee * Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitCollector-to-Emitter Voltage VCES 400 VGate-to-Emitter Voltage (DC) VGES 4 VGate-to-Emitter Voltage (Pulse) VGES PW1ms 5 VCollector Current (Pulse) ICP VGE=2.5V, CM=100F 150 AMaximum Collector-to-Emitter dv / dt dv / dt VCE320V, starting Tch=25C 400 V / sChannel Temperature Tch 150 CStorage Temperature Tstg -40 to +150 C* : Concerning dv / dt (slope of Collector Voltage at the time