tig066ss.pdf datasheet:

TIG066SS Ordering number : ENA1794SANYO SemiconductorsDATA SHEETN-Channel IGBTTIG066SSLight-Controlling Flash ApplicationsFeatures Low-saturation voltage 4.0V drive Enhansment type Built-in Gate-to-Emitter protection diode High speed switchingSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitCollector-to-Emitter Voltage (DC) VCES 400 VCollector-to-Emitter Voltage (Pulse) VCESP PW1ms 450 VGate-to-Emitter Voltage (DC) VGES 6 VGate-to-Emitter Voltage (Pulse) VGESP PW1ms 8 VCollector Current (Pulse) ICP CM=600F 150 AMaximum Collector-to-Emitter dv / dt dv / dt VCE320V, starting Tch=25C 1500 V / sChannel Temperature Tch 150 CStorage Temperature Tstg -40 to +150 CProduct & Package InformationPackage Dimensions Package : SOP8unit : mm (typ) JEITA, JE