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IXGR50N60BD1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGR50N60BD1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 2.3V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 75A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación: 85

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: ISOPLUS247

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IXGR50N60BD1 Datasheet (PDF)

1.1. ixgr50n60a2u1.pdf Size:144K _ixys

IXGR50N60BD1
IXGR50N60BD1

Advance Technical Information IXGR 50N60A2U1 VCES = 600 V IGBT with Diode IC25 = 75 A Low Saturation Voltage IGBT with VCE(sat) = 1.7 V Low Forward Drop Diode Electrically Isolated Mounting Tab Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247(IXGR) E153432 VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V VGEM Trans

1.2. ixgr50n60c2.pdf Size:607K _ixys

IXGR50N60BD1
IXGR50N60BD1

IXGR 50N60C2 VCES = 600 V HiPerFASTTM IXGR 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25C to 150C 600 V (IXGR) VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V (ISOLATED TAB) VGEM Transient 30 V IC25 TC = 25C75 A G = Gate C =

1.3. ixgr50n60b2.pdf Size:611K _ixys

IXGR50N60BD1
IXGR50N60BD1

IXGR 50N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 50N60B2D1 IC25 = 68 A ISOPLUS247TM VCE(sat) = 2.2 V B2-Class High Speed IGBTs tfi(typ) = 65 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25C to 150C 600 V (IXGR) VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G (ISOLATED TAB) VGES Continuous

1.4. ixgr50n60a2u1.pdf Size:140K _igbt_a

IXGR50N60BD1
IXGR50N60BD1

Advance Technical Information IXGR 50N60A2U1 VCES = 600 V IGBT with Diode IC25 = 75 A Low Saturation Voltage IGBT with VCE(sat) = 1.7 V Low Forward Drop Diode Electrically Isolated Mounting Tab Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247(IXGR) E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V

1.5. ixgr50n60b.pdf Size:563K _igbt_a

IXGR50N60BD1
IXGR50N60BD1

VCES = 600 V IXGR 50N60B HiPerFASTTM IGBT IC25 = 75 A IXGR 50N60BD1 ISOPLUS247TM VCE(sat) = 2.5 V (Electrically Isolated Back Surface) tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C E Isolated Backside* IC25 TC = 25

1.6. ixgr50n60bd1.pdf Size:563K _igbt_a

IXGR50N60BD1
IXGR50N60BD1

VCES = 600 V IXGR 50N60B HiPerFASTTM IGBT IC25 = 75 A IXGR 50N60BD1 ISOPLUS247TM VCE(sat) = 2.5 V (Electrically Isolated Back Surface) tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C E Isolated Backside* IC25 TC = 25

1.7. ixgr50n60c2.pdf Size:506K _igbt_a

IXGR50N60BD1
IXGR50N60BD1

IXGR 50N60C2 VCES = 600 V HiPerFASTTM IXGR 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25°C to 150°C 600 V (IXGR) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V (ISOLATED TAB) VGEM Transient ±30 V IC25 TC = 25°C75 A

1.8. ixgr50n60b2d1.pdf Size:514K _igbt_a

IXGR50N60BD1
IXGR50N60BD1

IXGR 50N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 50N60B2D1 IC25 = 68 A ISOPLUS247TM VCE(sat) = 2.2 V B2-Class High Speed IGBTs tfi(typ) = 65 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25°C to 150°C 600 V (IXGR) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G (ISOLATED TAB) VGES C

1.9. ixgr50n60c2d1.pdf Size:506K _igbt_a

IXGR50N60BD1
IXGR50N60BD1

IXGR 50N60C2 VCES = 600 V HiPerFASTTM IXGR 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25°C to 150°C 600 V (IXGR) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V (ISOLATED TAB) VGEM Transient ±30 V IC25 TC = 25°C75 A

1.10. ixgr50n60b2.pdf Size:514K _igbt_a

IXGR50N60BD1
IXGR50N60BD1

IXGR 50N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 50N60B2D1 IC25 = 68 A ISOPLUS247TM VCE(sat) = 2.2 V B2-Class High Speed IGBTs tfi(typ) = 65 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25°C to 150°C 600 V (IXGR) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G (ISOLATED TAB) VGES C

Otros transistores... IXGR48N60B3 , IXGR48N60B3D1 , IXGR48N60C3D1 , IXGR50N160H1 , IXGR50N60A2U1 , IXGR50N60B , IXGR50N60B2 , IXGR50N60B2D1 , GT60M102 , IXGR50N60C2 , IXGR50N60C2D1 , IXGR50N90B2D1 , IXGR55N120A3H1 , IXGR60N60B2 , IXGR60N60B2D1 , IXGR60N60C2 , IXGR60N60C2C1 .

 


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Introduzca al menos 1 números o letras