IXST35N120B Todos los transistores

 

IXST35N120B IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXST35N120B
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.6(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 27 nS
   Coesⓘ - Capacitancia de salida, typ: 260 pF
   Paquete / Cubierta: TO268
 

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IXST35N120B PDF specs

 ..1. Size:80K  ixys
 ixst35n120b.pdf pdf_icon

IXST35N120B

IXSH 35N120B IGBT IC25 = 70 A IXST 35N120B VCES = 1200 V VCE(sat) = 3.6 V "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C70 A TO-268 ( IXST) IC90 TC = 90 C35 A ICM TC = 25 C, 1 ... See More ⇒

 ..2. Size:82K  ixys
 ixsh35n120b ixst35n120b.pdf pdf_icon

IXST35N120B

IXSH 35N120B IGBT IC25 = 70 A IXST 35N120B VCES = 1200 V VCE(sat) = 3.6 V "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C70 A TO-268 ( IXST) IC90 TC = 90 C35 A ICM TC = 25 C, 1 ... See More ⇒

 9.1. Size:71K  ixys
 ixst30n60cd1.pdf pdf_icon

IXST35N120B

High Speed IGBT with Diode IXSH 30 N60CD1 VCES = 600 V IXSK 30 N60CD1 IC25 = 55 A IXST 30 N60CD1 VCE(sat) = 2.5 V Short Circuit SOA Capability tfi = 70 ns Preliminary data TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V TO-268 (D3) (IXST) VGES Continuous 20 V VGEM Transient 30 V C G... See More ⇒

 9.2. Size:129K  ixys
 ixst30n60b.pdf pdf_icon

IXST35N120B

VCES ICES tfi High Speed IGBT IXSH/IXST 30N60B 600 V 2.0 V 140 ns IXSH/IXST 30N60C 600 V 2.5 V 70 ns Short Circuit SOA Capability TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25 C55 A IC90 TC = 90 C30 A G ICM ... See More ⇒

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Otros transistores... SIW120N65G2P2D , IXSR35N120BD1 , IXSR40N60BD1 , IXSR40N60CD1 , IXST15N120BD1 , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , YGW60N65F1A1 , SIW100N65G2P2D , IXST45N120B , IXSX35N120BD1 , IXSX40N60BD1 , IXSX80N60B , IXXA50N60B3 , IXXH100N60B3 , IXXH100N60C3 .

 

 
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