IXST35N120B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXST35N120B
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.6(max) V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 27 nS
Coesⓘ - Capacitancia de salida, typ: 260 pF
Qgⓘ - Carga total de la puerta, typ: 120 nC
Paquete / Cubierta: TO268
- Selección de transistores por parámetros
IXST35N120B Datasheet (PDF)
ixst35n120b.pdf
IXSH 35N120BIGBT IC25 = 70 AIXST 35N120BVCES = 1200 VVCE(sat) = 3.6 V"S" Series - Improved SCSOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C70 ATO-268 ( IXST)IC90 TC = 90C35 AICM TC = 25C, 1
ixsh35n120b ixst35n120b.pdf
IXSH 35N120BIGBT IC25 = 70 AIXST 35N120BVCES = 1200 VVCE(sat) = 3.6 V"S" Series - Improved SCSOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C70 ATO-268 ( IXST)IC90 TC = 90C35 AICM TC = 25C, 1
ixst30n60cd1.pdf
High Speed IGBT with Diode IXSH 30 N60CD1VCES = 600 VIXSK 30 N60CD1IC25 = 55 AIXST 30 N60CD1VCE(sat) = 2.5 VShort Circuit SOA Capabilitytfi = 70 nsPreliminary dataTO-247AD(IXSH)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 150C 600 V EVCGR TJ = 25C to 150C; RGE = 1 MW 600 VTO-268 (D3)(IXST)VGES Continuous 20 VVGEM Transient 30 VCG
ixst30n60b.pdf
VCES ICES tfiHigh Speed IGBTIXSH/IXST 30N60B 600 V 2.0 V 140 nsIXSH/IXST 30N60C 600 V 2.5 V 70 nsShort Circuit SOA CapabilityTO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC = 25C55 AIC90 TC = 90C30 AGICM
Otros transistores... SIW120N65G2P2D , IXSR35N120BD1 , IXSR40N60BD1 , IXSR40N60CD1 , IXST15N120BD1 , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , RJH3047 , SIW100N65G2P2D , IXST45N120B , IXSX35N120BD1 , IXSX40N60BD1 , IXSX80N60B , IXXA50N60B3 , IXXH100N60B3 , IXXH100N60C3 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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