HGT1S12N60C3DRS Todos los transistores

 

HGT1S12N60C3DRS IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGT1S12N60C3DRS
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 104 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 24 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 37 nS
   Paquete / Cubierta: TO263
 

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HGT1S12N60C3DRS PDF specs

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HGT1S12N60C3DRS

HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The ... See More ⇒

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HGT1S12N60C3DRS

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

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Otros transistores... HGT1S12N60A4S , HGT1S12N60B3 , HGT1S12N60B3D , HGT1S12N60B3DS , HGT1S12N60B3S , HGT1S12N60C3 , HGT1S12N60C3D , HGT1S12N60C3DR , MBQ40T65FDSC , HGT1S12N60C3DS , HGTP12N60C3R , HGT1S12N60C3R , HGT1S12N60C3RS , HGT1S12N60C3S , HGT1S12N60C3S9A , HGT1S1N120BNDS9A , HGT1S14N36G3VL .

 

 
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