IXA220I650NA - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXA220I650NA
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 625 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 255 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 50 nS
Paquete / Cubierta: SOT227
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IXA220I650NA Datasheet (PDF)
ixa220i650na.pdf
IXA220I650NAtentativeVCES = 650VXPT IGBTI= 255AC25VCE(sat) = 1.6VSingle IGBTPart numberIXA220I650NABackside: isolated(C) 3(G) 2(E) 1+4Features / Advantages: Applications: Package: SOT-227B (minibloc) Easy paralleling due to the positive temperature AC motor drives Isolation Voltage: V~3000 coefficient of the on-state voltage Solar inverter In
mixa225pf1200tsf.pdf
MIXA225PF1200TSFpreliminaryVCES = 2x 1200VXPT IGBT ModuleI= 360AC25VCE(sat) = 1.8VPhase leg + free wheeling Diodes + NTCPart numberMIXA225PF1200TSFBackside: isolated52 1 8 7 94310/116Features / Advantages: Applications: Package: SimBus F High level of integration - only one AC motor drives Isolation Voltage: V~3000 power semiconductor module re
mixa225rf1200tsf.pdf
MIXA225RF1200TSFtentativeVCES = 1200 VXPT IGBT ModuleIC25 = 360 AVCE(sat) = 1.8 VBoost chopper + free wheeling Diodes + NTCPart numberMIXA225RF1200TSF52 1 8 9T43DBoostD10/116Features / Advantages: Applications: Package: SimBus F High level of integration - only one Brake for AC motor drives Industry standard outlinepower semiconductor module r
Otros transistores... IXYA20N65B3 , IXYA20N65C3 , IXYA20N65C3D1 , IXYA50N65C3 , IXYF30N450 , IXYF40N450 , IXA20PT1200LB , IXA20RG1200DHGLB , IXRH40N120 , IXA30RG1200DHGLB , IXA40I4000KN , IXA40RG1200DHGLB , IXA70R1200NA , ISL9V3040P3 , ISL9V3040S3 , RGT00TS65D , RGT16NS65D .
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