SKM100GB12V - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SKM100GB12V
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 159 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 38 nS
Coesⓘ - Capacitancia de salida, typ: 590 pF
Paquete / Cubierta: MODULE
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SKM100GB12V Datasheet (PDF)
skm100gb12v.pdf
SKM100GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 159 ATj = 175 CTc =80C 121 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 121 ATj = 175 CSKM100GB12VTc =80C 91 AIFnom 1
skm100gb12t4g.pdf
SKM100GB12T4GAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 154 ATj = 175 CTc =80C 118 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 118 ATj = 175 CSKM100GB12T4GTc =80
Otros transistores... ART20U120 , ART30U120 , ART40U120 , ART45U120SPEC , AUIRGDC0250 , SKM100GAL12T4 , SKM100GB12T4 , SKM100GB12T4G , JT075N065WED , SKM100GB176D , SKM145GAL176D , SKM145GB066D , SKM145GB176D , SKM150GAL12T4 , SKM150GAL12V , SKM150GAR12T4 , SKM150GB12T4 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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