DM2G150SH6NE Todos los transistores

 

DM2G150SH6NE IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DM2G150SH6NE
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 568 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 80 nS
   Coesⓘ - Capacitancia de salida, typ: 1400 pF
   Paquete / Cubierta: MODULE
 

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DM2G150SH6NE PDF specs

 ..1. Size:254K  dawin
dm2g150sh6ne.pdf pdf_icon

DM2G150SH6NE

D WTM D WTM DM2G150SH6NE DAWIN Electronics DAWIN Electronics Jan. 2012 High Power Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN S IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives 6... See More ⇒

 3.1. Size:306K  dawin
dm2g150sh6n.pdf pdf_icon

DM2G150SH6NE

D WTM D WTM DM2G150SH6N DAWIN Electronics DAWIN Electronics Jan. 2012 High Power Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri... See More ⇒

 4.1. Size:524K  dawin
dm2g150sh6a.pdf pdf_icon

DM2G150SH6NE

D WTM D WTM DM2G150SH6A DAWIN Electronics DAWIN Electronics Aug. 2009 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, moto... See More ⇒

 5.1. Size:66K  dawin
dm2g150sh12a.pdf pdf_icon

DM2G150SH6NE

Preliminary D WTM D WTM Apr. 2008 DM2G150SH12A DAWIN Electronics DAWIN Electronics High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power ... See More ⇒

Otros transistores... VS-40MT120UHTAPBF , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , VS-70MT060WSP , ISL9V3040D3S , ISL9V3040S3S , GT50N322A , DM2G150SH6N , FGH60N60SMD , DM2G200SH12A , DM2G200SH12AE , DM2G200SH6A , DM2G200SH6N , DM2G300SH12A , DM2G300SH6A , DM2G300SH6NE , DM2G400SH6A .

 

 
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