DM2G75SH12A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DM2G75SH12A
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 600 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 8 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 65 nS
Coesⓘ - Capacitancia de salida, typ: 400 pF
Qgⓘ - Carga total de la puerta, typ: 780 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de DM2G75SH12A - IGBT
DM2G75SH12A Datasheet (PDF)
dm2g75sh12a.pdf
Mar. 2008DM2G75SH12ADM2G75SH12AHigh Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-1 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drives and other applications whe
dm2g75sh6a.pdf
DM2G75SH6AJuly. 2010High Power NPT & Rugged IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are sign
dm2g75sh6n.pdf
DM2G75SH6NJan. 2012High Power Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are signif
Otros transistores... DM2G100SH6A , DM2G100SH6N , DM2G150SH12A , DM2G150SH12AE , DM2G150SH6A , DM2G50SH12A , DM2G50SH6A , DM2G50SH6N , FGPF4536 , DM2G75SH6A , DM2G75SH6N , CY20AAJ-8H , CY25AAJ-8F , SHD724401 , SHD724402 , SHD724502 , SHD724602 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2