FGH40T65SH - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FGH40T65SH
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

   Pcⓘ - Máxima potencia disipada: 268 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 34.4 nS
   Coesⓘ - Capacitancia de salida, typ: 70 pF
   Qgⓘ - Carga total de la puerta, typ: 72.2 nC
   Paquete / Cubierta: TO247

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FGH40T65SH Datasheet (PDF)

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fgh40t65sh.pdf

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SHDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplica-tions where low conduction and switching losses areCessential.Features Maximum Junction Temperature: TJ

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fgh40t65shdf.pdf

May 2014FGH40T65SHDF650 V, 40 A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchilds new series offield stop 3rd generation IGBTs offer superior conduction and Positive Temperaure Co-efficient for Easy Parallel Operatingswitching performance and easy parallel operation. This device

0.2. Size:1508K onsemi
fgh40t65shd-f155.pdf