IHW40N120R5 Todos los transistores

 

IHW40N120R5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IHW40N120R5
   Tipo de transistor: IGBT + Diode
   Código de marcado: H40MR5
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 394 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Coesⓘ - Capacitancia de salida, typ: 70 pF
   Qgⓘ - Carga total de la puerta, typ: 310 nC
   Paquete / Cubierta: TO247

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IHW40N120R5 Datasheet (PDF)

 ..1. Size:1770K  infineon
ihw40n120r5.pdf

IHW40N120R5
IHW40N120R5

IHW40N120R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability due to positive

 7.1. Size:1767K  infineon
ihw40n135r5.pdf

IHW40N120R5
IHW40N120R5

IHW40N135R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability due to positive

 8.1. Size:454K  infineon
ihw40n60t.pdf

IHW40N120R5
IHW40N120R5

IHW40T60 TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop-technology with soft, fast recovery anti-parallel EmCon HE diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum junction temperature 175 C Short circuit withstand time 5s GE Trench and fieldstop technology for 600 V applications offers : - very tight parameter distribution

 8.2. Size:788K  infineon
ihw40n60rf ver2 3g.pdf

IHW40N120R5
IHW40N120R5

IHW40N60RFIH-seriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat Low EMI Qualified according to JEDEC J-STD-020 and JESD-022 for

 8.3. Size:2129K  infineon
ihw40n65r5.pdf

IHW40N120R5
IHW40N120R5

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW40N65R5Data sheetIndustrial Power ControlIHW40N65R5Resonant Switching SeriesReverse-Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic reverse-conducting diode with low forwardvoltage TRENCHSTOPTM technology offers:- very tight parameter distributionG- high ru

 8.4. Size:378K  infineon
ihw40n60t-d20rev2 3.pdf

IHW40N120R5
IHW40N120R5

IHW40N60T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggednes

 8.5. Size:792K  infineon
ihw40n60r 2 4.pdf

IHW40N120R5
IHW40N120R5

IHW40N60RIH-seriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive temperature coeffici

 8.6. Size:2029K  infineon
ihw40n60rf.pdf

IHW40N120R5
IHW40N120R5

IGBTReverse conducting IGBTIHW40N60RFResonant Switching SeriesData sheetIndustrial Power ControlIHW40N60RFResonant Switching SeriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight parameter distributionG- high ruggedness, temp

 8.7. Size:2060K  infineon
ihw40n60r.pdf

IHW40N120R5
IHW40N120R5

IGBTReverse conducting IGBTIHW40N60RResonant Switching SeriesData sheetIndustrial Power ControlIHW40N60RResonant Switching SeriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight parameter distributionG- high ruggedness, temper

Otros transistores... IGZ50N65H5 , IGZ75N65H5 , IHFW40N65R5S , IHW25N120E1 , IHW30N120R5 , IHW30N135R5 , IHW30N160R5 , IHW30N65R5 , YGW40N65F1A1 , IHW40N135R5 , IKA08N65ET6 , IKA10N65ET6 , IKA15N65ET6 , IKB15N65EH5 , IKB20N65EH5 , IKB30N65EH5 , IKB30N65ES5 .

 

 
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