IXGN200N60B Todos los transistores

 

IXGN200N60B IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGN200N60B
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 600 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 45 nS
   Coesⓘ - Capacitancia de salida, typ: 680 pF
   Paquete / Cubierta: SOT227B
 

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Principales características: IXGN200N60B

 ..1. Size:559K  ixys
 ixgn200n60b.pdf pdf_icon

IXGN200N60B

IXGN 200N60B VCES = 600 V HiPerFASTTM IGBT IC25 = 200 A VCE(sat) = 2.1 V E Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C 200 A C IL Terminal Current Limit 100 A IC90 TC = 90 C 120 A G = Gate, C = Collector, E = Emitter

 0.1. Size:184K  ixys
 ixgn200n60b3.pdf pdf_icon

IXGN200N60B

VCES = 600V IXGN200N60B3 GenX3TM 600V IGBT IC110 = 200A VCE(sat) 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 E Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V E VGEM Transient 30 V C IC25 TC = 25 C 300 A IC110 TC

 4.1. Size:553K  ixys
 ixgn200n60a2.pdf pdf_icon

IXGN200N60B

IXGN 200N60A2 VCES = 600 V IGBT IC25 = 200 A Optimized for Switching VCE(sat) = 1.35 V up to 5 kHz Preliminary Data Sheet E Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C 200 A C IC110 TC = 110 C 100 A ICM TC = 25 C,

 4.2. Size:131K  ixys
 ixgn200n60 ixgn200n60a.pdf pdf_icon

IXGN200N60B

HiPerFASTTM IGBT VCES IC25 VCE(sat) IXGN 200N60 600 V 200 A 2.5 V IXGN 200N60A 600 V 200 A 2.7 V E Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C 200 A C IC90 TC = 90 C 100 A ICM TC = 25 C, 1 ms 300 A G = Gate, C = Collec

MOSTRAR MÁS

Otros transistores... IXGK80N60A , IXGK80N60AU1 , IXGM17N100 , IXGM17N100A , IXGM25N100 , IXGM25N100A , IXGN200N60 , IXGN200N60A , BT60T60ANFK , IXGN50N60B , IXGN50N60BD2 , IXGN50N60BD3 , IXGN60N60 , IXGP12N100 , IXGP12N100A , IXGP12N100AU1 , IXGP12N100U1 .

History: CT30VM-8

 

 
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