TT075N065EQ - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TT075N065EQ
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 625 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 144 nS
Coesⓘ - Capacitancia de salida, typ: 377 pF
Paquete / Cubierta: TO-247
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TT075N065EQ Datasheet (PDF)
tt075n065eq.pdf
N N-CHANNEL IGBT RTT075N065EQ MAIN CHARACTERISTICS Package TO-247 IC 75A VCES 650V Vcesat-typ 1.6V TO-247 APPLICATIONS Industrial Inverter UPS UPS DC-DC Converters DC-DC Motordrives Solarconverters TO-247-4L
att075n065eq.pdf
N N-CHANNEL IGBT RATT075N065EQ MAIN CHARACTERISTICS Package IC 75A VCE 650V Vcesat-typ 1.7V APPLICATIONS Industrial Inverter On Board Chargers DC-DC Converters DC-DC Motordrives FEATURES Low gate
tt075n120ebc.pdf
N N-CHANNEL IGBT RTT075N120EBC MAIN CHARACTERISTICS Package TO-247plus IC 75A VCES 1200V Vcesat-typ 1.8V APPLICATIONS Build in SIC SBD General purpose Inverters TO-247plus UPS UPS FEATURES Low gate charge Trench FS Technolo
tt075u065fbc.pdf
N N-CHANNEL IGBT RTT075U065FBC MAIN CHARACTERISTICS Package IC 75A VCES 650V Vcesat-typ 1.6V APPLICATIONS Built in SiC SBD Charging pile UPS UPS Solar converters Energy Storage FEATURES Low gate c
tt075u065fqb.pdf
N N-CHANNEL IGBT RTT075U065FQB MAIN CHARACTERISTICS Package IC 75A VCE 650V VCEsat-TYP 1.8V APPLICATIONS Charging pile UPS UPS Solar converters FEATURES Low gate charge Trench FS Trench FS Technolog
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Liste
Recientemente añadidas las descripciónes de los transistores
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