SPI80N06S-08 Todos los transistores

 

SPI80N06S-08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPI80N06S-08
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 53 nS
   Cossⓘ - Capacitancia de salida: 1075 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO262
 

 Búsqueda de reemplazo de SPI80N06S-08 MOSFET

   - Selección ⓘ de transistores por parámetros

 

SPI80N06S-08 Datasheet (PDF)

 ..1. Size:208K  1
 spi80n06s-08 spp80n06s-08 spb80n06s-08.pdf pdf_icon

SPI80N06S-08

SPB80N06S-08SPI80N06S-08, SPP80N06S-08SIPMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Normal Level -Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperature Green PackagePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 ..2. Size:205K  infineon
 spb80n06s-08 spi80n06s-08 spp80n06s-08 spp80n06s spb80n06s spi80n06s-08green.pdf pdf_icon

SPI80N06S-08

SPB80N06S-08SPI80N06S-08, SPP80N06S-08SIPMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Normal Level -Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperature Green PackagePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 4.1. Size:221K  infineon
 spi80n06s-80 spp80n06s-08.pdf pdf_icon

SPI80N06S-08

SPB80N06S-08SPI80N06S-08, SPP80N06S-08SIPMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Normal Level -Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperature Green PackagePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 5.1. Size:419K  infineon
 spp80n06s2-08 spb80n06s2-08 spi80n06s2-08.pdf pdf_icon

SPI80N06S-08

SPI80N06S2-08SPP80N06S2-08,SPB80N06S2-08OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 8 m Enhancement modeID 80 A 175C operating temperatureP- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-08 P- TO220 -3-1 Q67060-S42832N0608SPB80N06S2-08 P- TO263 -

MOSTRAR MÁS

Otros transistores... SPD18P06PG , SPD30N03S2L-07G , SPD30N03S2L-10G , SPD30N03S2L-20G , SPD30P06PG , SPD50N03S2-07G , SPD50N03S2L-06G , SPD50P03LG , IRF640 , SPI07N60C3 , SPI07N60S5 , SPI07N65C3 , SPI08N50C3 , SPI08N80C3 , SPI11N60C3 , SPI11N60CFD , SPI11N60S5 .

History: IPB114N03LG | QM4302D | SM4066CSK

 

 
Back to Top

 


 
.