SPI80N06S-08 Todos los transistores

 

SPI80N06S-08 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPI80N06S-08
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 53 nS
   Cossⓘ - Capacitancia de salida: 1075 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO262
 

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SPI80N06S-08 PDF Specs

 ..1. Size:208K  1
 spi80n06s-08 spp80n06s-08 spb80n06s-08.pdf pdf_icon

SPI80N06S-08

SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Normal Level -Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive ... See More ⇒

 ..2. Size:205K  infineon
 spb80n06s-08 spi80n06s-08 spp80n06s-08 spp80n06s spb80n06s spi80n06s-08green.pdf pdf_icon

SPI80N06S-08

SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Normal Level -Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive ... See More ⇒

 4.1. Size:221K  infineon
 spi80n06s-80 spp80n06s-08.pdf pdf_icon

SPI80N06S-08

SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Normal Level -Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive ... See More ⇒

 5.1. Size:419K  infineon
 spp80n06s2-08 spb80n06s2-08 spi80n06s2-08.pdf pdf_icon

SPI80N06S-08

SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) 8 m Enhancement mode ID 80 A 175 C operating temperature P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2-08 P- TO220 -3-1 Q67060-S4283 2N0608 SPB80N06S2-08 P- TO263 -... See More ⇒

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Otros transistores... SPD18P06PG , SPD30N03S2L-07G , SPD30N03S2L-10G , SPD30N03S2L-20G , SPD30P06PG , SPD50N03S2-07G , SPD50N03S2L-06G , SPD50P03LG , IRFP460 , SPI07N60C3 , SPI07N60S5 , SPI07N65C3 , SPI08N50C3 , SPI08N80C3 , SPI11N60C3 , SPI11N60CFD , SPI11N60S5 .

History: SPD30N03S2L-10G

 

 
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