SPI07N60C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPI07N60C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.5 nS
Cossⓘ - Capacitancia de salida: 260 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: TO262
Búsqueda de reemplazo de MOSFET SPI07N60C3
SPI07N60C3 Datasheet (PDF)
spp07n60c3 spi07n60c3 spa07n60c3.pdf
SPP07N60C3SPI07N60C3, SPA07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 P
spp07n60c3 spa07n60c3 spi07n60c3 rev.3.2.pdf
SPP07N60C3SPI07N60C3, SPA07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 P
spp07n60s5 spi07n60s5.pdf
SPP07N60S5SPI07N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Worldwide best RDS(on) in TO 220PG-TO262 PG-TO220 Ultra low gate charge2 Periodic avalanche rated Extreme dv/dt rated321 Ultra low effective capacitancesP-TO220-3-1 Improved transconductanceType Package Or
spp07n65c3 spa07n65c3 spi07n65c3 rev1.92.pdf
SPP07N65C3, SPI07N65C3SPA07N65C3CoolMOS Power TransistorV 650 VDSFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220-3 PG-TO262-3-1 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 PG-TO
spp07n65c3 spa07n65c3 spi07n65c3.pdf
SPA07N65C3 330 = 3:)5 !5%26-6735V 650 VDSFeatureRDS(on) 0.6 + ;L G;KEBJI?ED7GN >?=> KEBI7=; I;9>DEBE=NID 7. A 2 BIG7 BEL =7I; 9>7G=;PGTO220 PGTO220PGTO262 1 -;G?E:?9 7K7B7D9>; G7I;:2 "MIG;C; :v/dt rated3 % ?=> F;7A 9JGG;DI 97F78?B?IN2 211P-TO220-3-31 &CFGEK;: IG7DH9ED:J9I7D9;PTO220
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918