SPI07N60C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPI07N60C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.5 nS
Cossⓘ - Capacitancia de salida: 260 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: TO262
Búsqueda de reemplazo de SPI07N60C3 MOSFET
Principales características: SPI07N60C3
spp07n60c3 spi07n60c3 spa07n60c3.pdf
SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 High peak current capability 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 P
spp07n60c3 spa07n60c3 spi07n60c3 rev.3.2.pdf
SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 High peak current capability 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 P
spp07n60s5 spi07n60s5.pdf
SPP07N60S5 SPI07N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A Worldwide best RDS(on) in TO 220 PG-TO262 PG-TO220 Ultra low gate charge 2 Periodic avalanche rated Extreme dv/dt rated 3 2 1 Ultra low effective capacitances P-TO220-3-1 Improved transconductance Type Package Or
spp07n65c3 spa07n65c3 spi07n65c3 rev1.92.pdf
SPP07N65C3, SPI07N65C3 SPA07N65C3 CoolMOS Power Transistor V 650 V DS Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A Ultra low gate charge PG-TO220-3 PG-TO262-3-1 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 High peak current capability 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 PG-TO
Otros transistores... SPD30N03S2L-07G , SPD30N03S2L-10G , SPD30N03S2L-20G , SPD30P06PG , SPD50N03S2-07G , SPD50N03S2L-06G , SPD50P03LG , SPI80N06S-08 , IRFZ44 , SPI07N60S5 , SPI07N65C3 , SPI08N50C3 , SPI08N80C3 , SPI11N60C3 , SPI11N60CFD , SPI11N60S5 , SPI11N65C3 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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