TPC8301 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8301
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 290 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de TPC8301 MOSFET
TPC8301 Datasheet (PDF)
tpc8301.pdf

TPC8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSVI) TPC8301 Lithium Ion Battery Applications Portable Equipment Applications Unit: mmNotebook PCs Small footprint due to small and thin package Low drain-source ON resistance : R = 95 m (typ.) DS (ON) High forward transfer admittance : |Y | = 4 S (typ.) fs Low leakage current : IDSS = -
tpc8303.pdf

TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) TPC8303 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PCs Low drain-source ON resistance : RDS (ON) = 27 m (typ.) High forward transfer admittance : |Y | = 7 S (typ.) fs Low leakage current : I = -10 A (max) (V = -30 V) DSS DS Enhancement-mode : Vt
tpc8302.pdf

TPC8302 2TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSVI) TPC8302 Lithium Ion Battery Applications Portable Equipment Applications Unit: mmNotebook PCs 2.5 V Gate drive Small footprint due to small and thin package Low drain-source ON resistance: R = 100 m (typ.) DS (ON) High forward transfer admittance: |Yfs| = 5 S (typ.) Low leakag
Otros transistores... TPC8209 , TPC8210 , TPC8211 , TPC8212-H , TPC8213-H , TPC8214-H , TPC8216-H , TPC8218-H , IRF1407 , TPC8302 , TPC8303 , TPC8401 , TPC8404 , TPC8405 , TPC8406-H , TPC8A01 , TPC8A02-H .



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