HAT2205C Todos los transistores

 

HAT2205C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HAT2205C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.85 W

Tensión drenaje-fuente (Vds): 12 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 3 nS

Conductancia de drenaje-sustrato (Cd): 72 pF

Resistencia drenaje-fuente RDS(on): 0.05 Ohm

Empaquetado / Estuche: CMFPAK6

Búsqueda de reemplazo de MOSFET HAT2205C

 

HAT2205C Datasheet (PDF)

1.1. rej03g1237 hat2205c.pdf Size:98K _renesas

HAT2205C
HAT2205C

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.1. rej03g0232 hat2200r.pdf Size:107K _renesas

HAT2205C
HAT2205C

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. rej03g0448 hat2204c.pdf Size:153K _renesas

HAT2205C
HAT2205C

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.3. rej03g1239 hat2207c.pdf Size:98K _renesas

HAT2205C
HAT2205C

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.4. rej03g1678 hat2200wpds.pdf Size:84K _renesas

HAT2205C
HAT2205C

Preliminary Datasheet HAT2200WP REJ03G1678-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 13, 2010 Features ? Capable of 8 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 22 m? typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 8 6 7 5 4 1, 2, 3 Source G 4 G

 4.5. rej03g0233 hat2201r.pdf Size:106K _renesas

HAT2205C
HAT2205C

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.6. rej03g1236 hat2202c.pdf Size:217K _renesas

HAT2205C
HAT2205C

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.7. rej03g1238 hat2206c.pdf Size:97K _renesas

HAT2205C
HAT2205C

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.8. r07ds0323ej hat2203c.pdf Size:84K _renesas

HAT2205C
HAT2205C

Preliminary Datasheet HAT2203C R07DS0323EJ0500 (Previous: REJ03G0447-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features ? Low on-resistance RDS(on) = 69 m? typ.(at VGS = 4.5 V) ? Low drive current ? High density mounting ? 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) 2 3 4 5 D D D D Index ba

4.9. rej03g1679 hat2201wpds.pdf Size:84K _renesas

HAT2205C
HAT2205C

Preliminary Datasheet HAT2201WP REJ03G1679-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 21, 2010 Features ? Capable of 8 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 34 m? typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 8 6 7 5 4 1, 2, 3 Source G 4 G

4.10. rej03g1595 hat2208rds.pdf Size:130K _renesas

HAT2205C
HAT2205C

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

Otros transistores... HAT2199WP , HAT2200R , HAT2200WP , HAT2201R , HAT2201WP , HAT2202C , HAT2203C , HAT2204C , IRFP450 , HAT2206C , HAT2207C , HAT2208R , HAT2209R , HAT2210R , HAT2210RJ , HAT2215R , HAT2215RJ .

 
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