FKP252 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FKP252
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 40 W
Voltaje máximo drenador - fuente |Vds|: 250 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 25 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Tiempo de subida (tr): 50 nS
Conductancia de drenaje-sustrato (Cd): 330 pF
Resistencia entre drenaje y fuente RDS(on): 0.075 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET FKP252
FKP252 Datasheet (PDF)
fkp252.pdf
MOSFET FKP252 December. 2005 Package---TO220F Features Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25C) Characteristic Symbol Rating UnitDrain to Source Voltage VDSS 250 VGate
fkp252.pdf
isc N-Channel MOSFET Transistor FKP252FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
fkp253.pdf
N-Channel MOS FET FKP253 June, 2007 Features Package---FM20 (TO220 Full Mold) Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25C Parameter Symbol Rating UnitDrain to Source Voltage VDS
fkp250a.pdf
N-Channel MOS FET FKP250A June, 2007 Features Package---FM100 (TO-3P Full Mold) Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25C Parameter Symbol Rating UnitDrain to Source Voltage V
fkp253.pdf
isc N-Channel MOSFET Transistor FKP253FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
fkp250a.pdf
isc N-Channel MOSFET Transistor FKP250AFEATURESDrain Current I =50A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 43m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
