SSD3055 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSD3055
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 28 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.6 nS
Cossⓘ - Capacitancia de salida: 81 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de SSD3055 MOSFET
SSD3055 Datasheet (PDF)
ssd3055.pdf

SSD3055 18A , 30V , RDS(ON) 22 N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack)DESCRIPTION The SSD3055 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter appl
ssd30n10-50d.pdf

SSD30N10-50D 26A, 100V, RDS(ON) 50m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack)DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low R
ssd30n06-39d.pdf

SSD30N06-39D N-Ch Enhancement Mode Power MOSFET 30A, 60V, RDS(ON) 38 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack)DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are
ssd30n03-40d.pdf

SSD30N03-40D N-Ch Enhancement Mode Power MOSFET 34A, 30V, RDS(ON) 26m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES
Otros transistores... SSD12P10 , SSD15N10 , SSD20N06-90D , SSD20N10-250D , SSD20N15-250D , SSD20P06-135D , SSD2504 , SSD2504S , IRF2807 , SSD30N03-40D , SSD30N06-39D , SSD30N10-50D , SSD30N10-70D , SSD408 , SSD40N03 , SSD40N04-20D , SSD40N10-30D .
History: CEH2305 | CEB07N65A | SVF740MJ | IXFH12N50F | IRFR022 | IRFR210
History: CEH2305 | CEB07N65A | SVF740MJ | IXFH12N50F | IRFR022 | IRFR210



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