2SK1971 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1971
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 200 W
Tensión drenaje-fuente |Vds|: 500 V
Tensión compuerta-fuente |Vgs|: 30 V
Corriente continua de drenaje |Id|: 35 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 170 nS
Conductancia de drenaje-sustrato (Cd): 1120 pF
Resistencia drenaje-fuente RDS(on): 0.19 Ohm
Empaquetado / Estuche: TO3PL
Búsqueda de reemplazo de MOSFET 2SK1971
2SK1971 Datasheet (PDF)
0.1. 2sk1971.pdf 
Size:82K _renesas
2SK1971 Silicon N Channel MOS FET REJ03G0990-0200 (Previous: ADE-208-1338) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control Outline RENESAS Package code: PRSS0004ZF-A(Package name
0.2. 2sk1971.pdf Size:221K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1971DESCRIPTIONDrain Current I =35A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuitable for switching regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V
8.1. 2sk1976.pdf Size:360K _rohm
8.2. 2sk1975.pdf Size:86K _no
8.3. 2sk1976.pdf Size:215K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1976DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh Breakdown VoltageABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 V
8.4. 2sk1974.pdf Size:215K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1974DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0) 60 VDSS
Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
