AP13N50W Todos los transistores

 

AP13N50W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP13N50W

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 156 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 14 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 50 nS

Conductancia de drenaje-sustrato (Cd): 180 pF

Resistencia drenaje-fuente RDS(on): 0.52 Ohm

Empaquetado / Estuche: TO3P

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AP13N50W Datasheet (PDF)

1.1. ap13n50w.pdf Size:58K _a-power

AP13N50W
AP13N50W

AP13N50W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.52? Ў Fast Switching Characteristic ID 14A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos

3.1. ap13n50r.pdf Size:158K _a-power

AP13N50W
AP13N50W

AP13N50R-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Low On-resistance BVDSS 500V ▼ Simple Drive Requirement RDS(ON) 0.52Ω ▼ Fast Switching Characteristic ID 14A G ▼ RoHS Compliant & Halogen-Free S Description AP13N50 series are from Advanced Power innovated design and silicon process technology to achieve the lowest

3.2. ap13n50i-hf.pdf Size:96K _a-power

AP13N50W
AP13N50W

AP13N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.52? Ў Fast Switching Characteristic ID 14A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device

 3.3. ap13n50r-hf.pdf Size:57K _a-power

AP13N50W
AP13N50W

AP13N50R-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.52? Ў Fast Switching Characteristic ID 14A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device

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