AP13N50W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP13N50W
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 156 W
Tensión drenaje-fuente (Vds): 500 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 14 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 50 nS
Conductancia de drenaje-sustrato (Cd): 180 pF
Resistencia drenaje-fuente RDS(on): 0.52 Ohm
Empaquetado / Estuche: TO3P
Búsqueda de reemplazo de MOSFET AP13N50W
AP13N50W Datasheet (PDF)
1.1. ap13n50w.pdf 
Size:58K _a-power
AP13N50W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.52? Ў Fast Switching Characteristic ID 14A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos
3.1. ap13n50r.pdf Size:158K _a-power
AP13N50R-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Low On-resistance BVDSS 500V ▼ Simple Drive Requirement RDS(ON) 0.52Ω ▼ Fast Switching Characteristic ID 14A G ▼ RoHS Compliant & Halogen-Free S Description AP13N50 series are from Advanced Power innovated design and silicon process technology to achieve the lowest
3.2. ap13n50i-hf.pdf Size:96K _a-power
AP13N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.52? Ў Fast Switching Characteristic ID 14A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device
3.3. ap13n50r-hf.pdf Size:57K _a-power
AP13N50R-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.52? Ў Fast Switching Characteristic ID 14A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device
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