SSF2145CH6 Todos los transistores

 

SSF2145CH6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSF2145CH6
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.8(2.9) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 58(75) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055(0.08) Ohm
   Paquete / Cubierta: TSOP6
 

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SSF2145CH6 Datasheet (PDF)

 ..1. Size:280K  silikron
 ssf2145ch6.pdf pdf_icon

SSF2145CH6

SSF2145CH6 Main Product Characteristics: n-ch p-ch VDSS 20V -20V RDSon(typ.) 38mohm 64mohm Marking and pin TSOP-6 Schematic diagram ID 4.8A 2.9A Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for load switching and buttery protection applications 150 operating temperature Description: It utilizes the l

 9.1. Size:347K  silikron
 ssf2116ej3.pdf pdf_icon

SSF2145CH6

SSF2116EJ3 Main Product Characteristics: VDSS 20V RDS(on) 14.5mohmtyp.ID 8.5A DFN2X5-6L-EP Marking and pin Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

 9.2. Size:545K  silikron
 ssf2129h3.pdf pdf_icon

SSF2145CH6

SSF2129H3 Main Product Characteristics: VDSS -20V D1D2G1 G2 RDS(on) 21m (typ.) S1 S2ID -6.0A Marking and pin SOP-8 S che matic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re

 9.3. Size:542K  silikron
 ssf2122e.pdf pdf_icon

SSF2145CH6

SSF2122E Main Product Characteristics: VDSS 20V RDS(on) 15.2mohm(typ.) ID 7A DFN 3x3-8L Marking and pin Schematic diagram A ss ignme nt Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

MOSTRAR MÁS

Otros transistores... SSF20NS60 , SSF20NS60F , SSF20NS65 , SSF20NS65F , SSF2112H2 , SSF2116EJ3 , SSF2122E , SSF2129H3 , P55NF06 , SSF2160G4 , SSF2300 , SSF2300A , SSF2300B , SSF2301 , SSF2301A , SSF2301B , SSF2302 .

History: FK3303010L | IPD60R1K5CE | CHM4435AZGP | SWP3205B | TPC8113 | NTMFS4C054N | TPCA8080

 

 
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