SSF2145CH6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF2145CH6

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.7 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 4.8(2.9) A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 58(75) pF

Resistencia drenaje-fuente RDS(on): 0.055(0.08) Ohm

Empaquetado / Estuche: TSOP6

Búsqueda de reemplazo de MOSFET SSF2145CH6

SSF2145CH6 Datasheet (PDF)

1.1. ssf2145ch6.pdf Size:280K _silikron

SSF2145CH6 Main Product Characteristics: n-ch p-ch VDSS 20V -20V RDSon(typ.) 38mohm 64mohm Marking and pin TSOP-6 Schematic diagram ID 4.8A 2.9A Assignment Features and Benefits:  Advanced trench MOSFET process technology  Special designed for load switching and buttery protection applications  150℃ operating temperature Description: It utilizes the l

5.1. ssf2112h2.pdf Size:634K _silikron

SSF2112H2 Main Product Characteristics: D1 D2 VDSS 20V D1 D2 S1 S2 G1 G2 2112H2 8205A S1 S2 G1 G2 RDS(on) 10mohm(typ.) S1 S2 ID 8A Marking and pin Schematic diagram TSSOP-8 Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-re

5.2. ssf2160g4.pdf Size:621K _silikron

SSF2160G4 Main Product Characteristics: VDSS 20V 2160G4 2160G4 S25 RDS(on) 28mohm(typ.) ID 4.5A Marking and pin SOT23-3 Schematic diagram Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switc

5.3. ssf2116ej3.pdf Size:347K _silikron

SSF2116EJ3 Main Product Characteristics: VDSS 20V RDS(on) 14.5mohm（typ.） ID 8.5A DFN2X5-6L-EP Marking and pin Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recov

5.4. ssf2129h3.pdf Size:545K _silikron

SSF2129H3 Main Product Characteristics: VDSS -20V D1 D2 G1 G2 RDS(on) 21mΩ (typ.) S1 S2 ID -6.0A Marking and pin SOP-8 S che matic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and re

5.5. ssf2122e.pdf Size:542K _silikron

SSF2122E Main Product Characteristics: VDSS 20V RDS(on) 15.2mohm(typ.) ID 7A ① DFN 3x3-8L Marking and pin Schematic diagram A ss ignme nt Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recov

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: