SSF2145CH6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSF2145CH6
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.8(2.9) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Cossⓘ - Capacitancia de salida: 58(75) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055(0.08) Ohm
   Paquete / Cubierta: TSOP6

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SSF2145CH6 Datasheet (PDF)

..1. Size:280K silikron
ssf2145ch6.pdf

SSF2145CH6 Main Product Characteristics: n-ch p-ch VDSS 20V -20V RDSon(typ.) 38mohm 64mohm Marking and pin TSOP-6 Schematic diagram ID 4.8A 2.9A Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for load switching and buttery protection applications 150 operating temperature Description: It utilizes the l

9.1. Size:347K silikron
ssf2116ej3.pdf

SSF2116EJ3 Main Product Characteristics: VDSS 20V RDS(on) 14.5mohmtyp.ID 8.5A DFN2X5-6L-EP Marking and pin Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

9.2. Size:545K silikron
ssf2129h3.pdf

SSF2129H3 Main Product Characteristics: VDSS -20V D1D2G1 G2 RDS(on) 21m (typ.) S1 S2ID -6.0A Marking and pin SOP-8 S che matic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re

9.3. Size:542K silikron
ssf2122e.pdf

SSF2122E Main Product Characteristics: VDSS 20V RDS(on) 15.2mohm(typ.) ID 7A DFN 3x3-8L Marking and pin Schematic diagram A ss ignme nt Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

9.4. Size:621K silikron
ssf2160g4.pdf

SSF2160G4Main Product Characteristics: VDSS 20V 2160G42160G4S25 RDS(on) 28mohm(typ.)ID 4.5A Marking and pin SOT23-3Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switc

9.5. Size:634K silikron
ssf2112h2.pdf

SSF2112H2Main Product Characteristics: D1D2VDSS 20V D1 D2S1 S2G1 G22112H28205AS1 S2G1 G2 RDS(on) 10mohm(typ.)S1 S2ID 8A Marking and pin Schematic diagramTSSOP-8AssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-re

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