SM2321PSA Todos los transistores

 

SM2321PSA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM2321PSA

Código: B21*

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.56 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 4.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 12.3 nS

Conductancia de drenaje-sustrato (Cd): 74 pF

Resistencia drenaje-fuente RDS(on): 0.056 Ohm

Empaquetado / Estuche: SOT23

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SM2321PSA Datasheet (PDF)

1.1. sm2321psa.pdf Size:258K _sino

SM2321PSA
SM2321PSA

SM2321PSA ® P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-4.3A , D RDS(ON)= 56m (Max.) @ VGS=-10V S RDS(ON)= 68m (Max.) @ VGS=-4.5V G RDS(ON)= 94m (Max.) @ VGS=-2.5V Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in Notebook Computer, Portable Equipment and Battery Powe

5.1. tsm2328cx.pdf Size:60K _update_mosfet

SM2321PSA
SM2321PSA

 TSM2328 100V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(mΩ) ID (A) 2. Source 3. Drain 250 @ VGS =10V 1.5 100 General Description The TSM2328 utilized advanced processing techniques to achieve the lowest possible On-Resistance, extremely efficient and cost-effectiveness device. The TSM2328 is universally used for all commercial-in

5.2. tsm2323cx.pdf Size:253K _update_mosfet

SM2321PSA
SM2321PSA

 TSM2323 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: VDS (V) RDS(on)(mΩ) ID (A) 1. Gate 2. Source 39 @ VGS = -4.5V -4.7 3. Drain -20 52 @ VGS = -2.5V -4.1 68 @ VGS = -1.8V -2.0 Features Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch P-C

 5.3. sm2328nsan.pdf Size:254K _update_mosfet

SM2321PSA
SM2321PSA

® SM2328NSAN N-Channel Enhancement Mode MOSFET Features Pin Description 20V/4A, D RDS(ON)= 40m (max.) @ VGS= 4.5V S RDS(ON)= 55m (max.) @ VGS= 2.5V G RDS(ON)= 85m (max.) @ VGS= 1.8V Top View of Narrow SOT-23 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in DC/AC Inverter Systems. S N-Channel MOSFET Ordering

5.4. sm2327psa.pdf Size:256K _update_mosfet

SM2321PSA
SM2321PSA

SM2327PSA ® P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-4A, D RDS(ON)=56m (max.) @ VGS=-10V S RDS(ON)=70m (max.) @ VGS=-4.5V G RDS(ON)=100m (max.) @ VGS=-2.5V Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in LCD TV, Monitor, S Notebook Computer, Portable Equipment and

 5.5. tsm2323 a07.pdf Size:366K _taiwansemi

SM2321PSA
SM2321PSA

TSM2323 20V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m?) ID (A) 1. Gate 39 @ VGS = -4.5V -4.7 2. Source 3. Drain -20 52 @ VGS = -2.5V -4.1 68 @ VGS = -1.8V -2.0 Features Block Diagram ? Advance Trench Process Technology ? High Density Cell Design for Ultra Low On-resistance Application ? Load Switch ? PA Switch P-Channel MOSFET

5.6. sm2326nsan.pdf Size:163K _sino

SM2321PSA
SM2321PSA

® SM2326NSAN N-Channel Enhancement Mode MOSFET Features Pin Description • 20V/3A, D RDS(ON)= 70mΩ(max.) @ VGS= 4.5V S RDS(ON)= 90mΩ(max.) @ VGS= 2.5V G RDS(ON)= 110mΩ(max.) @ VGS= 1.8V Top View of SOT-23N • Reliable and Rugged • Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in DC/AC Inverter Systems S DC-DC Converter

5.7. sm2320nsa.pdf Size:257K _sino

SM2321PSA
SM2321PSA

SM2320NSA ® N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6.3A , D RDS(ON)=23m (max.) @ VGS=10V RDS(ON)=27m (max.) @ VGS=4.5V S RDS(ON)=40m (max.) @ VGS=2.5V G RDS(ON)=72m (max.) @ VGS=1.8V ESD Protection Top View of SOT-23-3 Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) G Applications Power Management in Notebook Comput

5.8. sm2323psa.pdf Size:257K _sino

SM2321PSA
SM2321PSA

SM2323PSA ® P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-2.9A, D RDS(ON) = 108m (max.) @ VGS =-10V S RDS(ON) = 182m (max.) @ VGS =-4.5V G Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available (RoHS Compliant) ESD Protection D Note : The diode connected between the gate and source serves only as protection against ESD. No gat

5.9. sm2329psa.pdf Size:259K _sino

SM2321PSA
SM2321PSA

SM2329PSA ® P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3.3A, D RDS(ON)= 85m (Max.) @ VGS=-4.5V S RDS(ON)= 120m (Max.) @ VGS=-2.5V G RDS(ON)= 210m (Max.) @ VGS=-1.8V Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in Notebook Computer, Portable Equipment and Battery Powe

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