AON6262E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6262E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 48 W
Tensión drenaje-fuente (Vds): 60 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 40 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2.2 V
Tiempo de elevación (tr): 19 nS
Conductancia de drenaje-sustrato (Cd): 520 pF
Resistencia drenaje-fuente RDS(on): 0.0062 Ohm
Empaquetado / Estuche: DFN5x6
Búsqueda de reemplazo de MOSFET AON6262E
AON6262E Datasheet (PDF)
1.1. aon6262e.pdf 
Size:334K _aosemi
AON6262E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 6.2mΩ • ESD protected RDS(ON) (at VGS=4.5V) < 8.5mΩ Typical ESD protection HBM Class 2 Applications 100% UIS Tested 100% Rg Tested • High efficiency power supply •
4.1. aon6268.pdf Size:331K _aosemi
AON6268 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 44A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 4.7mΩ RDS(ON) (at VGS=4.5V) < 6.3mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronous Rectification for AC-DC Quick Charger D DFN5x6 Top View Top View Bottom View
4.2. aon6264e.pdf Size:347K _aosemi
AON6264E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 28A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 9.5mΩ • ESD protected RDS(ON) (at VGS=4.5V) < 13.3mΩ Typical ESD protection HBM Class 2 Applications 100% UIS Tested 100% Rg Tested • High efficiency power supply
4.3. aon6260.pdf Size:262K _aosemi
AON6260 60V N-Channel MOSFET General Description Product Summary VDS The AON6260 uses trench MOSFET technology that is 60V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 2.4mΩ switching power losses are minimized due to an RDS(ON) (at VGS=4.5V) < 3.5mΩ extremely low combinati
4.4. aon6266.pdf Size:368K _aosemi
AON6266 60V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS MV) technology 60V • Low RDS(ON) ID (at VGS=10V) 30A • Low Gate Charge RDS(ON) (at VGS=10V) < 15mΩ • Optimized for fast-switching applications RDS(ON) (at VGS=4.5V) < 19mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Con
Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
