AP65SL190DI Todos los transistores

 

AP65SL190DI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP65SL190DI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO220F
 

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AP65SL190DI Datasheet (PDF)

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AP65SL190DI

AP65SL190DIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190D series are from Advanced Power innovated designand silicon process technology to achieve the

 4.1. Size:201K  ape
ap65sl190dp.pdf pdf_icon

AP65SL190DI

AP65SL190DPHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190D series are from Advanced Power innovated designand silicon process technology to achieve the

 4.2. Size:202K  ape
ap65sl190dwl.pdf pdf_icon

AP65SL190DI

AP65SL190DWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Low trr / Qrr RDS(ON) 0.19 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190D series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible

 4.3. Size:108K  ape
ap65sl190dr.pdf pdf_icon

AP65SL190DI

AP65SL190DRHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Low trr / Qrr RDS(ON) 0.19 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190D series are from Advanced Power innovated designand silicon process technology to achieve the lowest possible

Otros transistores... AP65SL380BI , AP65SL380AIN , AP65SL380AI , AP65SL380AH , AP65SL210AFI , AP65SL190DWL , AP65SL190DR , AP65SL190DP , 12N60 , AP65SL190AWL , AP65SL190AR , AP65SL190AP , AP65SL190AIN , AP65SL190AI , AP65SL145AFI , AP65SL130DP , AP65SL130DI .

History: AMS4004 | APT8024JFLL | STD4NK100Z | APM2317 | 2SJ450 | NTD65N03R-035 | JCS7N70R

 

 
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