AP6679GS-HF Todos los transistores

 

AP6679GS-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP6679GS-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 89 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 960 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO263

 Búsqueda de reemplazo de MOSFET AP6679GS-HF

 

Principales características: AP6679GS-HF

 ..1. Size:97K  ape
 ap6679gp-hf ap6679gs-hf.pdf pdf_icon

AP6679GS-HF

AP6679GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) r

 5.1. Size:60K  ape
 ap6679gp-a ap6679gs-a.pdf pdf_icon

AP6679GS-HF

AP6679GS/P-A Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65A G RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-

 6.1. Size:198K  ape
 ap6679gs.pdf pdf_icon

AP6679GS-HF

AP6679GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device desi

 6.2. Size:62K  ape
 ap6679gs p-a-hf.pdf pdf_icon

AP6679GS-HF

AP6679GS/P-A-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

MOSTRAR MÁS

Otros transistores... AP6679BGJ-HF , AP6679GH , AP6679GI , AP6679GJ , AP6679GP-A , AP6679GP-HF , AP6679GS , AP6679GS-A , IRFZ48N , AP6680AGM-HF , AP6680GM , AP6681GMT-HF , AP20N15AGI-HF , AP20P02GH , AP20P02GJ , AP20T15GM-HF , AP2301AGN .

 

 
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